Investigation of a memory effect in a Au/(Ti–Cu)Ox-gradient thin film/TiAlV structure

• Damian Wojcieszak,
• Jarosław Domaradzki,
• Michał Mazur,
• Tomasz Kotwica and
• Danuta Kaczmarek

Beilstein J. Nanotechnol. 2022, 13, 265–273, doi:10.3762/bjnano.13.21

• investigations allowed us to conclude about the possible mechanism for the observed resistive switching mechanism. Keywords: gradient thin film; magnetron sputtering; memory effect; resistive switching; Introduction In recent years, significant development has been observed in design, simulation, manufacturing

• Lite). Additionally, circular 1 mm gold pads were evaporated on top of the prepared structure to allow for electrical characterization. The average material composition of the gradient thin film was determined using X-ray microanalysis employing an EDAX Genesis energy-dispersive spectrometer (EDS) as

• conductivity of the prepared gradient thin film. The p-type of electrical conduction is often reported for Cu2O (or CuO)-based thin films, while TiO2 is an n-type oxide [46][47]. In the case of the prepared mixed (Ti–Cu)Ox thin film, the result obtained clearly testifies that holes are the major charge